IPP65R600C6

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IPP65R600C6 datasheet

• Маркировка
  IPP65R600C6
• Производитель
  Infineon Technologies
• Описание
  Infineon Technologies IPP65R600C6 Configuration: Single Continuous Drain Current: 7.3 A Drain-source Breakdown Voltage: 700 V Fall Time: 13 nS Gate Charge Qg: 23 nC Gate-source Breakdown Voltage: +/- 20 V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Package / Case: TO-220-3 Part # Aliases: IPP65R600C6XK IPP65R600C6XKSA1 SP000661310 Power Dissipation: 63 W Resistance Drain-source Rds (on): 0.6 Ohms at 10 V Rise Time: 9 nS Rohs: yes Transistor Polarity: N-Channel Typical Turn-off Delay Time: 80 nS RoHS: yes Drain-Source Breakdown Voltage: 700 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.6 Ohms at 10 V Typical Turn-Off Delay Time: 80 nS
• Количество страниц
  19 шт.
• Форматы файла
  HTML, PDF

  (Для просмотра требуется Adobe Acrobat Reader)

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